ISC025N08NM5LFATMA1 Infineon Technologies


Виробник: Infineon Technologies
TRENCH 40<-<100V
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Технічний опис ISC025N08NM5LFATMA1 Infineon Technologies

Description: OPTIMOSTM5LINEARFET80V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 198A (Tc), Rds On (Max) @ Id, Vgs: 2.55mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 217W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 115µA, Supplier Device Package: PG-TDSON-8 FL, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V.

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ISC025N08NM5LFATMA1 ISC025N08NM5LFATMA1 Виробник : Infineon Technologies Description: OPTIMOSTM5LINEARFET80V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 2.55mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 115µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
товар відсутній
ISC025N08NM5LFATMA1 ISC025N08NM5LFATMA1 Виробник : Infineon Technologies Description: OPTIMOSTM5LINEARFET80V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 2.55mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 115µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
товар відсутній