на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 57.80 грн |
| 10+ | 40.34 грн |
| 100+ | 23.93 грн |
| 500+ | 20.04 грн |
| 1000+ | 17.03 грн |
| 2500+ | 15.41 грн |
| 5000+ | 14.31 грн |
Відгуки про товар
Написати відгук
Технічний опис ISC052N03LF2SATMA1 Infineon Technologies
Description: ISC052N03LF2SATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 74A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V, Power Dissipation (Max): 3W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 30µA, Supplier Device Package: PG-TDSON-8-62, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V.
Інші пропозиції ISC052N03LF2SATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
ISC052N03LF2SATMA1 | Виробник : Infineon Technologies |
Description: ISC052N03LF2SATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 74A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Supplier Device Package: PG-TDSON-8-62 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V |
товару немає в наявності |
|
|
|
ISC052N03LF2SATMA1 | Виробник : Infineon Technologies |
Description: ISC052N03LF2SATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 74A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Supplier Device Package: PG-TDSON-8-62 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V |
товару немає в наявності |