| Кількість | Ціна |
|---|---|
| 1+ | 371.29 грн |
| 10+ | 282.63 грн |
| 25+ | 218.84 грн |
| 100+ | 191.22 грн |
| 250+ | 176.04 грн |
| 500+ | 166.37 грн |
| 1000+ | 154.64 грн |
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Технічний опис ISC055N15NM6ATMA1 Infineon Technologies
Description: TRENCH >=100V, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Supplier Device Package: PG-TDSON-8, Vgs(th) (Max) @ Id: 4V @ 110µA, Power Dissipation (Max): 3W (Ta), 214W (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 15V, Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 130A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції ISC055N15NM6ATMA1
| Фото | Назва | Виробник | Інформація | Доступність | _PRICE_WITHOUT_VAT | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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ISC055N15NM6ATMA1 | Infineon Technologies |
 Description: TRENCH >=100VInput Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Supplier Device Package: PG-TDSON-8 Vgs(th) (Max) @ Id: 4V @ 110µA Power Dissipation (Max): 3W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 15V Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 130A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 234 шт: термін постачання 21-31 дні (днів) |
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| ISC055N15NM6ATMA1 |
|
Виробник: Infineon Technologies
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 15V
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 15V
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 234 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 385.99 грн |
| 10+ | 248.82 грн |
| 100+ | 178.85 грн |