ISC0602NLSATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 14A/66A TDSON-8
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Відгуки про товар
Написати відгук
Технічний опис ISC0602NLSATMA1 Infineon Technologies
Description: MOSFET N-CH 80V 14A/66A TDSON-8, Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-TDSON-8-6, Vgs(th) (Max) @ Id: 2.3V @ 29µA, Power Dissipation (Max): 2.5W (Ta), 60W (Tc).
Інші пропозиції ISC0602NLSATMA1 за ціною від 41.38 грн до 166.93 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
ISC0602NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 14A/66A TDSON-8 Part Status: Active Supplier Device Package: PG-TDSON-8-6 Vgs(th) (Max) @ Id: 2.3V @ 29µA Power Dissipation (Max): 2.5W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
на замовлення 10539 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
ISC0602NLSATMA1 | Infineon Technologies |
MOSFETs IFX FET > 60-80V |
на замовлення 4014 шт: термін постачання 21-30 дні (днів) |
|
| ISC0602NLSATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 14A/66A TDSON-8
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: MOSFET N-CH 80V 14A/66A TDSON-8
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
на замовлення 10539 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 130.83 грн |
| 10+ | 85.21 грн |
| 100+ | 60.41 грн |
| 500+ | 46.33 грн |
| 1000+ | 42.94 грн |
| 2000+ | 41.38 грн |
| ISC0602NLSATMA1 |
|
Виробник: Infineon Technologies
MOSFETs IFX FET > 60-80V
MOSFETs IFX FET > 60-80V
на замовлення 4014 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 166.93 грн |
| 10+ | 110.23 грн |
| 100+ | 66.04 грн |
| 500+ | 52.30 грн |
| 1000+ | 45.11 грн |
| 2500+ | 44.69 грн |
| 5000+ | 42.92 грн |