| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 272.22 грн |
| 10+ | 197.68 грн |
| 25+ | 152.57 грн |
| 100+ | 133.24 грн |
| 250+ | 122.19 грн |
| 500+ | 115.29 грн |
| 1000+ | 106.31 грн |
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Технічний опис ISC079N15NM6ATMA1 Infineon Technologies
Description: TRENCH >=100V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Supplier Device Package: PG-TDSON-8, Vgs(th) (Max) @ Id: 4V @ 77µA, Power Dissipation (Max): 3W (Ta), 165W (Tc), Rds On (Max) @ Id, Vgs: 7.4mOhm @ 36A, 15V, Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 95A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції ISC079N15NM6ATMA1 за ціною від 114.34 грн до 298.23 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ISC079N15NM6ATMA1 | Infineon Technologies |
 Description: TRENCH >=100VInput Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Supplier Device Package: PG-TDSON-8 Vgs(th) (Max) @ Id: 4V @ 77µA Power Dissipation (Max): 3W (Ta), 165W (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 36A, 15V Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 95A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 4622 шт: термін постачання 21-31 дні (днів) |
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| ISC079N15NM6ATMA1 |
|
Виробник: Infineon Technologies
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 4V @ 77µA
Power Dissipation (Max): 3W (Ta), 165W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 36A, 15V
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 4V @ 77µA
Power Dissipation (Max): 3W (Ta), 165W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 36A, 15V
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 4622 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 298.23 грн |
| 10+ | 202.75 грн |
| 100+ | 157.16 грн |
| 500+ | 124.29 грн |
| 1000+ | 115.33 грн |
| 2000+ | 114.34 грн |