ISC079N15NM6ATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 36A, 15V
Power Dissipation (Max): 3W (Ta), 165W (Tc)
Vgs(th) (Max) @ Id: 4V @ 77µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 75 V
на замовлення 4622 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 305.59 грн |
| 10+ | 207.75 грн |
| 100+ | 161.05 грн |
| 500+ | 127.36 грн |
| 1000+ | 118.18 грн |
| 2000+ | 117.16 грн |
Відгуки про товар
Написати відгук
Технічний опис ISC079N15NM6ATMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 95A (Tc), Rds On (Max) @ Id, Vgs: 7.4mOhm @ 36A, 15V, Power Dissipation (Max): 3W (Ta), 165W (Tc), Vgs(th) (Max) @ Id: 4V @ 77µA, Supplier Device Package: PG-TDSON-8, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 75 V.
Інші пропозиції ISC079N15NM6ATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
ISC079N15NM6ATMA1 | Виробник : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 95A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 36A, 15V Power Dissipation (Max): 3W (Ta), 165W (Tc) Vgs(th) (Max) @ Id: 4V @ 77µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 75 V |
товару немає в наявності |