ISC0802NLSATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 22A/150A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 92µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V
| Кількість | Ціна |
|---|---|
| 5000+ | 41.14 грн |
| 10000+ | 37.27 грн |
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Технічний опис ISC0802NLSATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 22A/150A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 92µA, Supplier Device Package: PG-TDSON-8-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V.
Інші пропозиції ISC0802NLSATMA1 за ціною від 42.81 грн до 222.84 грн
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ISC0802NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 22A/150A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 92µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V |
на замовлення 12559 шт: термін постачання 21-31 дні (днів) |
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ISC0802NLSATMA1 | Infineon Technologies |
MOSFET TRENCH >=100V |
на замовлення 1034 шт: термін постачання 21-30 дні (днів) |
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| ISC0802NLSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 22A/150A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 92µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V
Description: MOSFET N-CH 100V 22A/150A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 92µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V
на замовлення 12559 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 153.83 грн |
| 10+ | 94.83 грн |
| 100+ | 64.26 грн |
| 500+ | 48.03 грн |
| 1000+ | 44.08 грн |
| 2000+ | 42.81 грн |
| ISC0802NLSATMA1 |
|
Виробник: Infineon Technologies
MOSFET TRENCH >=100V
MOSFET TRENCH >=100V
на замовлення 1034 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 222.84 грн |
| 10+ | 182.37 грн |
| 100+ | 126.16 грн |
| 250+ | 123.34 грн |
| 500+ | 107.13 грн |
| 1000+ | 86.69 грн |
| 5000+ | 83.17 грн |