ISC088N08NM6ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 28A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 23µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 40 V
| Кількість | Ціна |
|---|---|
| 3+ | 143.17 грн |
| 10+ | 88.07 грн |
| 100+ | 59.49 грн |
| 500+ | 44.36 грн |
| 1000+ | 40.66 грн |
| 2000+ | 38.98 грн |
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Технічний опис ISC088N08NM6ATMA1 Infineon Technologies
Description: TRENCH 40.
Інші пропозиції ISC088N08NM6ATMA1
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ISC088N08NM6ATMA1 | Виробник : Infineon Technologies |
Description: TRENCH 40<-<100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta), 59A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 28A, 10V Power Dissipation (Max): 3W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 23µA Supplier Device Package: PG-TDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 40 V |
товару немає в наявності |