ISC104N12LM6ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис ISC104N12LM6ATMA1 Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 60 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V, Part Status: Active, Supplier Device Package: PG-TDSON-8, Vgs(th) (Max) @ Id: 2.2V @ 35µA, Power Dissipation (Max): 3W (Ta), 94W (Tc), Rds On (Max) @ Id, Vgs: 10.4mOhm @ 28A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 63A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції ISC104N12LM6ATMA1 за ціною від 53.07 грн до 185.84 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ISC104N12LM6ATMA1 | Infineon Technologies |
Description: OPTIMOS 6 POWER-TRANSISTOR,120VInput Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8 Vgs(th) (Max) @ Id: 2.2V @ 35µA Power Dissipation (Max): 3W (Ta), 94W (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 28A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 63A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 5582 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
ISC104N12LM6ATMA1 | Infineon Technologies |
MOSFETs IFX FET >100-150V |
на замовлення 21592 шт: термін постачання 21-30 дні (днів) |
|
| ISC104N12LM6ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 5582 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 155.41 грн |
| 10+ | 105.60 грн |
| 100+ | 79.02 грн |
| 500+ | 61.94 грн |
| ISC104N12LM6ATMA1 |
![]() |
Виробник: Infineon Technologies
MOSFETs IFX FET >100-150V
MOSFETs IFX FET >100-150V
на замовлення 21592 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 185.84 грн |
| 10+ | 118.34 грн |
| 100+ | 71.19 грн |
| 500+ | 56.81 грн |
| 1000+ | 56.10 грн |
| 2500+ | 53.07 грн |


