ISC151N08NM6ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 15.1mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 13µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 40 V
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Технічний опис ISC151N08NM6ATMA1 Infineon Technologies
Description: TRENCH 40.
Інші пропозиції ISC151N08NM6ATMA1
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ISC151N08NM6ATMA1 | Виробник : Infineon Technologies |
Description: TRENCH 40<-<100V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 37A (Tc) Rds On (Max) @ Id, Vgs: 15.1mOhm @ 18A, 10V Power Dissipation (Max): 3W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 13µA Supplier Device Package: PG-TDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 40 V |
товару немає в наявності |