ISC165N15NM6ATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 16A, 15V
Power Dissipation (Max): 3W (Ta), 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TDSON-8-45
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
на замовлення 4034 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 157.66 грн |
| 10+ | 97.29 грн |
| 100+ | 66.33 грн |
| 500+ | 49.82 грн |
| 1000+ | 48.72 грн |
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Технічний опис ISC165N15NM6ATMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 15.6mOhm @ 16A, 15V, Power Dissipation (Max): 3W (Ta), 95W (Tc), Vgs(th) (Max) @ Id: 4V @ 35µA, Supplier Device Package: PG-TDSON-8-45, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V.
Інші пропозиції ISC165N15NM6ATMA1
| Фото | Назва | Виробник | Інформація |
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ISC165N15NM6ATMA1 | Виробник : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 15.6mOhm @ 16A, 15V Power Dissipation (Max): 3W (Ta), 95W (Tc) Vgs(th) (Max) @ Id: 4V @ 35µA Supplier Device Package: PG-TDSON-8-45 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V |
товару немає в наявності |
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ISC165N15NM6ATMA1 | Виробник : Infineon Technologies |
MOSFETs OptiMOS 6 power MOSFET 150 V normal level in SuperSO8 package |
товару немає в наявності |