| Кількість | Ціна |
|---|---|
| 2+ | 203.11 грн |
| 10+ | 131.31 грн |
| 100+ | 78.94 грн |
| 500+ | 65.48 грн |
| 1000+ | 63.65 грн |
| 2500+ | 61.81 грн |
| 5000+ | 55.26 грн |
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Технічний опис ISC240P06LMATMA1 Infineon Technologies
Description: MOSFET P-CH 60V 59A TDSON-8 FL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 59A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V, Power Dissipation (Max): 188W (Ta), Vgs(th) (Max) @ Id: 2V @ 2.34A, Supplier Device Package: PG-TDSON-8 FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V.
Інші пропозиції ISC240P06LMATMA1 за ціною від 65.31 грн до 209.33 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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ISC240P06LMATMA1 | Infineon Technologies |
 Description: MOSFET P-CH 60V 59A TDSON-8 FLPackaging: Cut Tape (CT) Part Status: Active Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V Power Dissipation (Max): 188W (Ta) Vgs(th) (Max) @ Id: 2V @ 2.34A Supplier Device Package: PG-TDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V |
на замовлення 4256 шт: термін постачання 21-31 дні (днів) |
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| ISC240P06LMATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 59A TDSON-8 FL
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V
Power Dissipation (Max): 188W (Ta)
Vgs(th) (Max) @ Id: 2V @ 2.34A
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
Description: MOSFET P-CH 60V 59A TDSON-8 FL
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V
Power Dissipation (Max): 188W (Ta)
Vgs(th) (Max) @ Id: 2V @ 2.34A
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
на замовлення 4256 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 209.33 грн |
| 10+ | 130.57 грн |
| 100+ | 90.06 грн |
| 500+ | 68.27 грн |
| 1000+ | 65.31 грн |