ISCH42N04LM7ATMA1 Infineon Technologies

Description: ISCH42N04LM7ATMA1, Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PG-TDSON-8, Vgs(th) (Max) @ Id: 1.8V @ 130µA, Power Dissipation (Max): 3W (Ta), 234W (Tc), Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 541A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).