ISCH57N04NM7VSCATMA1 Infineon Technologies
Виробник: Infineon Technologies
MOSFETs OptiMOS 7 40 V motor-drives optimized power MOSFETs in a PQFN 5x6 Dual Side Cooled package.
| Кількість | Ціна |
|---|---|
| 2+ | 267.73 грн |
| 10+ | 171.94 грн |
| 100+ | 114.05 грн |
| 500+ | 95.97 грн |
| 1000+ | 88.32 грн |
| 2500+ | 82.75 грн |
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Технічний опис ISCH57N04NM7VSCATMA1 Infineon Technologies
Description: ISCH57N04NM7VSCATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 443A (Tc), Rds On (Max) @ Id, Vgs: 0.52mOhm @ 50A, 15V, Power Dissipation (Max): 3W (Ta), 214W (Tc), Vgs(th) (Max) @ Id: 3.2V @ 113µA, Supplier Device Package: PG-WSON-8-2, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 20 V.
Інші пропозиції ISCH57N04NM7VSCATMA1
| Фото | Назва | Виробник | Інформація |
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ISCH57N04NM7VSCATMA1 | Виробник : Infineon Technologies |
Description: ISCH57N04NM7VSCATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 443A (Tc) Rds On (Max) @ Id, Vgs: 0.52mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 113µA Supplier Device Package: PG-WSON-8-2 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 20 V |
товару немає в наявності |
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ISCH57N04NM7VSCATMA1 | Виробник : Infineon Technologies |
Description: ISCH57N04NM7VSCATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 443A (Tc) Rds On (Max) @ Id, Vgs: 0.52mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 113µA Supplier Device Package: PG-WSON-8-2 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 20 V |
товару немає в наявності |