ISCH69N04NM7VATMA1 Infineon Technologies

Description: ISCH69N04NM7VATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 357A (Tc), Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 15V, Power Dissipation (Max): 3W (Ta), 167W (Tc), Vgs(th) (Max) @ Id: 3.15V @ 82µA, Supplier Device Package: PG-TDSON-8, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 20 V.