ISG0616N10NM5HSCATMA1 INFINEON
Виробник: INFINEON
Description: INFINEON - ISG0616N10NM5HSCATMA1 - Dual-MOSFET, Zweifach n-Kanal, 100 V, 139 A, 0.004 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 139A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 100V
euEccn: NLR
Bauform - Transistor: WHITFN-U01
Anzahl der Pins: 10Pin(s)
Produktpalette: OptiMOS 5 Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.004ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Zweifach n-Kanal
Verlustleistung, n-Kanal: 167W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (27-Jun-2024)
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Технічний опис ISG0616N10NM5HSCATMA1 INFINEON
Description: INFINEON - ISG0616N10NM5HSCATMA1 - Dual-MOSFET, Zweifach n-Kanal, 100 V, 139 A, 0.004 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: -, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: -, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 139A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: -, Drain-Source-Spannung Vds, n-Kanal: 100V, euEccn: NLR, Bauform - Transistor: WHITFN-U01, Anzahl der Pins: 10Pin(s), Produktpalette: OptiMOS 5 Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.004ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: Zweifach n-Kanal, Verlustleistung, n-Kanal: 167W, Betriebstemperatur, max.: 175°C, SVHC: No SVHC (27-Jun-2024).
Інші пропозиції ISG0616N10NM5HSCATMA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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ISG0616N10NM5HSCATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 100V 19A 10WHITFN Packaging: Tape & Reel (TR) Package / Case: 10-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 167W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 139A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 50V Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Vgs(th) (Max) @ Id: 3.8V @ 85µA Supplier Device Package: PG-WHITFN-10-1 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
|
|
ISG0616N10NM5HSCATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 100V 19A 10WHITFN Packaging: Cut Tape (CT) Package / Case: 10-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 167W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 139A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 50V Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Vgs(th) (Max) @ Id: 3.8V @ 85µA Supplier Device Package: PG-WHITFN-10-1 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
ISG0616N10NM5HSCATMA1 | Infineon Technologies |
MOSFETs IFX FET >80 - 100V |
товару немає в наявності |
В кошику од. на суму грн. |
| ISG0616N10NM5HSCATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| ISG0616N10NM5HSCATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 100V 19A 10WHITFN
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 139A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 50V
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Supplier Device Package: PG-WHITFN-10-1
Description: MOSFET 2N-CH 100V 19A 10WHITFN
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 139A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 50V
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Supplier Device Package: PG-WHITFN-10-1
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ISG0616N10NM5HSCATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 100V 19A 10WHITFN
Packaging: Cut Tape (CT)
Package / Case: 10-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 139A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 50V
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Supplier Device Package: PG-WHITFN-10-1
Description: MOSFET 2N-CH 100V 19A 10WHITFN
Packaging: Cut Tape (CT)
Package / Case: 10-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 139A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 50V
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Supplier Device Package: PG-WHITFN-10-1
товару немає в наявності
В кошику
од. на суму грн.
| ISG0616N10NM5HSCATMA1 |
|
Виробник: Infineon Technologies
MOSFETs IFX FET >80 - 100V
MOSFETs IFX FET >80 - 100V
товару немає в наявності
В кошику
од. на суму грн.
| ISG0616N10NM5HSCATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.