ISL6613AEIBZ-T Renesas / Intersil
| Кількість | Ціна |
|---|---|
| 2+ | 287.16 грн |
| 10+ | 254.75 грн |
| 25+ | 209.57 грн |
| 100+ | 181.44 грн |
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Технічний опис ISL6613AEIBZ-T Renesas / Intersil
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Input Type: Non-Inverting, Voltage - Supply: 10.8V ~ 13.2V, Operating Temperature: -40°C ~ 125°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Packaging: Tape & Reel (TR), Number of Drivers: 2, Driven Configuration: Half-Bridge, Channel Type: Synchronous, Rise / Fall Time (Typ): 26ns, 18ns, Supplier Device Package: 8-SOIC-EP, High Side Voltage - Max (Bootstrap): 36 V, DigiKey Programmable: Not Verified, Current - Peak Output (Source, Sink): 1.25A, 2A, Gate Type: N-Channel MOSFET.
Інші пропозиції ISL6613AEIBZ-T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
ISL6613AEIBZ-T | Renesas Electronics Corporation |
 Description: IC GATE DRVR HALF-BRIDGE 8SOICInput Type: Non-Inverting Voltage - Supply: 10.8V ~ 13.2V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Tape & Reel (TR) Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Synchronous Rise / Fall Time (Typ): 26ns, 18ns Supplier Device Package: 8-SOIC-EP High Side Voltage - Max (Bootstrap): 36 V DigiKey Programmable: Not Verified Current - Peak Output (Source, Sink): 1.25A, 2A Gate Type: N-Channel MOSFET |
товару немає в наявності |
В кошику од. на суму грн. |
| ISL6613AEIBZ-T |
|
Виробник: Renesas Electronics Corporation
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Input Type: Non-Inverting
Voltage - Supply: 10.8V ~ 13.2V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 26ns, 18ns
Supplier Device Package: 8-SOIC-EP
High Side Voltage - Max (Bootstrap): 36 V
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 1.25A, 2A
Gate Type: N-Channel MOSFET
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Input Type: Non-Inverting
Voltage - Supply: 10.8V ~ 13.2V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 26ns, 18ns
Supplier Device Package: 8-SOIC-EP
High Side Voltage - Max (Bootstrap): 36 V
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 1.25A, 2A
Gate Type: N-Channel MOSFET
товару немає в наявності
В кошику
од. на суму грн.