Технічний опис ISL6613CBZ INTERSIL
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, DigiKey Programmable: Not Verified, Current - Peak Output (Source, Sink): 1.25A, 2A, Gate Type: N-Channel MOSFET, Number of Drivers: 2, Driven Configuration: Half-Bridge, Channel Type: Synchronous, Rise / Fall Time (Typ): 26ns, 18ns, Supplier Device Package: 8-SOIC, High Side Voltage - Max (Bootstrap): 36 V, Input Type: Non-Inverting, Voltage - Supply: 10.8V ~ 13.2V, Operating Temperature: 0°C ~ 125°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube.
Інші пропозиції ISL6613CBZ
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
ISL6613CBZ | Renesas Electronics Corporation |
 Description: IC GATE DRVR HALF-BRIDGE 8SOICDigiKey Programmable: Not Verified Current - Peak Output (Source, Sink): 1.25A, 2A Gate Type: N-Channel MOSFET Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Synchronous Rise / Fall Time (Typ): 26ns, 18ns Supplier Device Package: 8-SOIC High Side Voltage - Max (Bootstrap): 36 V Input Type: Non-Inverting Voltage - Supply: 10.8V ~ 13.2V Operating Temperature: 0°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
| ISL6613CBZ |
|
Виробник: Renesas Electronics Corporation
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 1.25A, 2A
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 26ns, 18ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 36 V
Input Type: Non-Inverting
Voltage - Supply: 10.8V ~ 13.2V
Operating Temperature: 0°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 1.25A, 2A
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 26ns, 18ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 36 V
Input Type: Non-Inverting
Voltage - Supply: 10.8V ~ 13.2V
Operating Temperature: 0°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.