ISL9R860S3ST_NL Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: DIODE GEN PURP 600V 8A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 8A
Technology: Avalanche
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 430+ | 50.66 грн |
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Технічний опис ISL9R860S3ST_NL Fairchild Semiconductor
Description: DIODE GEN PURP 600V 8A TO263AB, Current - Reverse Leakage @ Vr: 100 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-263AB (D2PAK), Current - Average Rectified (Io): 8A, Technology: Avalanche, Reverse Recovery Time (trr): 30 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Bulk.