ISO5851DW Texas Instruments
Виробник: Texas InstrumentsDescription: DGTL ISO 5.7KV 1CH GT DVR 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 2.7A, 5.5A
Technology: Capacitive Coupling
Current - Output High, Low: 1.5A, 3.4A
Voltage - Isolation: 5700Vrms
Approval Agency: CQC, CSA, UR, VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 20ns, 20ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 110ns, 110ns
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
на замовлення 4947 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 428.7 грн |
| 10+ | 372.91 грн |
| 40+ | 355.59 грн |
| 120+ | 289.76 грн |
| 280+ | 276.74 грн |
| 520+ | 252.32 грн |
| 1000+ | 216.16 грн |
| 2520+ | 208.15 грн |
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Технічний опис ISO5851DW Texas Instruments
Category: MOSFET/IGBT drivers, Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16-W; -5÷2.5A, Supply voltage: 15...30V DC, Mounting: SMD, Input voltage: 3...5.5V, Output current: -5...2.5A, Type of integrated circuit: driver, Protection: undervoltage UVP, Operating temperature: -40...125°C, Integrated circuit features: galvanically isolated, Pulse fall time: 37ns, Insulation voltage: 5.7kV, Kind of package: tube, Case: SO16-W, Kind of integrated circuit: gate driver; high-/low-side, Number of channels: 2, Impulse rise time: 35ns, Topology: IGBT half-bridge; MOSFET half-bridge, кількість в упаковці: 1 шт.
Інші пропозиції ISO5851DW за ціною від 237.12 грн до 499.35 грн
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ISO5851DW | Виробник : Texas Instruments |
Isolated Gate Drivers 2.5-A / 5-A 5.7-kV RMS single channel isolated gate driver with protection features 16-SOIC -40 to 125 |
на замовлення 5135 шт: термін постачання 21-30 дні (днів) |
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ISO5851DW | Виробник : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16-W; -5÷2.5A Supply voltage: 15...30V DC Mounting: SMD Input voltage: 3...5.5V Output current: -5...2.5A Type of integrated circuit: driver Protection: undervoltage UVP Operating temperature: -40...125°C Integrated circuit features: galvanically isolated Pulse fall time: 37ns Insulation voltage: 5.7kV Kind of package: tube Case: SO16-W Kind of integrated circuit: gate driver; high-/low-side Number of channels: 2 Impulse rise time: 35ns Topology: IGBT half-bridge; MOSFET half-bridge кількість в упаковці: 1 шт |
товар відсутній |
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ISO5851DW | Виробник : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16-W; -5÷2.5A Supply voltage: 15...30V DC Mounting: SMD Input voltage: 3...5.5V Output current: -5...2.5A Type of integrated circuit: driver Protection: undervoltage UVP Operating temperature: -40...125°C Integrated circuit features: galvanically isolated Pulse fall time: 37ns Insulation voltage: 5.7kV Kind of package: tube Case: SO16-W Kind of integrated circuit: gate driver; high-/low-side Number of channels: 2 Impulse rise time: 35ns Topology: IGBT half-bridge; MOSFET half-bridge |
товар відсутній |