Інші пропозиції ISO5852SDW Мікросхема за ціною від 278.54 грн до 554.59 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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ISO5852SDW | Texas Instruments |
 Description: DGTL ISO 5.7KV 1CH GT DVR 16SOICPackaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 2.7A, 5.5A Technology: Capacitive Coupling Current - Output High, Low: 1.5A, 3.4A Voltage - Isolation: 5700Vrms Approval Agency: CQC, CSA, UR, VDE Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 18ns, 20ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 110ns, 110ns Number of Channels: 1 Voltage - Output Supply: 15V ~ 30V |
на замовлення 1493 шт: термін постачання 21-31 дні (днів) |
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ISO5852SDW | TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16-W; -5÷2.5A Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: SO16-W Output current: -5...2.5A Number of channels: 2 Mounting: SMD Protection: undervoltage UVP Operating temperature: -40...125°C Integrated circuit features: galvanically isolated Pulse fall time: 37ns Insulation voltage: 5.7kV Kind of package: tube Impulse rise time: 35ns Topology: IGBT half-bridge; MOSFET half-bridge Supply voltage: 15...30V DC Input voltage: 2.25...5.5V |
на замовлення 174 шт: термін постачання 14-30 дні (днів) |
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ISO5852SDW | Texas Instruments |
Galvanically Isolated Gate Drivers 5.7kVrms 2.5A/5A si ngle-channel isolate A 595-ISO5852SDWR |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| ISO5852SDW |
|
Виробник: Texas Instruments
Description: DGTL ISO 5.7KV 1CH GT DVR 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 2.7A, 5.5A
Technology: Capacitive Coupling
Current - Output High, Low: 1.5A, 3.4A
Voltage - Isolation: 5700Vrms
Approval Agency: CQC, CSA, UR, VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 18ns, 20ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 110ns, 110ns
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
Description: DGTL ISO 5.7KV 1CH GT DVR 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 2.7A, 5.5A
Technology: Capacitive Coupling
Current - Output High, Low: 1.5A, 3.4A
Voltage - Isolation: 5700Vrms
Approval Agency: CQC, CSA, UR, VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 18ns, 20ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 110ns, 110ns
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
на замовлення 1493 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 531.26 грн |
| 10+ | 394.76 грн |
| 40+ | 353.45 грн |
| 120+ | 310.06 грн |
| 280+ | 297.37 грн |
| 520+ | 289.84 грн |
| 1000+ | 278.54 грн |
| ISO5852SDW |
|
Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16-W; -5÷2.5A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -5...2.5A
Number of channels: 2
Mounting: SMD
Protection: undervoltage UVP
Operating temperature: -40...125°C
Integrated circuit features: galvanically isolated
Pulse fall time: 37ns
Insulation voltage: 5.7kV
Kind of package: tube
Impulse rise time: 35ns
Topology: IGBT half-bridge; MOSFET half-bridge
Supply voltage: 15...30V DC
Input voltage: 2.25...5.5V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16-W; -5÷2.5A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -5...2.5A
Number of channels: 2
Mounting: SMD
Protection: undervoltage UVP
Operating temperature: -40...125°C
Integrated circuit features: galvanically isolated
Pulse fall time: 37ns
Insulation voltage: 5.7kV
Kind of package: tube
Impulse rise time: 35ns
Topology: IGBT half-bridge; MOSFET half-bridge
Supply voltage: 15...30V DC
Input voltage: 2.25...5.5V
на замовлення 174 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 554.59 грн |
| 3+ | 486.13 грн |
| 10+ | 430.99 грн |
| 40+ | 352.09 грн |
| ISO5852SDW |
|
Виробник: Texas Instruments
Galvanically Isolated Gate Drivers 5.7kVrms 2.5A/5A si ngle-channel isolate A 595-ISO5852SDWR
Galvanically Isolated Gate Drivers 5.7kVrms 2.5A/5A si ngle-channel isolate A 595-ISO5852SDWR
на замовлення 18 шт:
термін постачання 21-30 дні (днів)