ISO5852SDW Texas Instruments
Виробник: Texas Instruments
Description: DGTL ISO 5.7KV 1CH GT DVR 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 2.7A, 5.5A
Technology: Capacitive Coupling
Current - Output High, Low: 1.5A, 3.4A
Voltage - Isolation: 5700Vrms
Approval Agency: CQC, CSA, UR, VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 18ns, 20ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 110ns, 110ns
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 500.93 грн |
| 10+ | 436.08 грн |
| 40+ | 415.82 грн |
| 120+ | 338.83 грн |
| 280+ | 323.60 грн |
| 520+ | 295.05 грн |
| 1000+ | 252.76 грн |
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Технічний опис ISO5852SDW Texas Instruments
Category: MOSFET/IGBT drivers, Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16-W; -5÷2.5A, Type of integrated circuit: driver, Kind of integrated circuit: gate driver; high-/low-side, Case: SO16-W, Output current: -5...2.5A, Number of channels: 2, Mounting: SMD, Operating temperature: -40...125°C, Impulse rise time: 35ns, Pulse fall time: 37ns, Input voltage: 2.25...5.5V, Supply voltage: 15...30V DC, Insulation voltage: 5.7kV, Integrated circuit features: galvanically isolated, Topology: IGBT half-bridge; MOSFET half-bridge, Kind of package: tube, Protection: undervoltage UVP.
Інші пропозиції ISO5852SDW за ціною від 251.28 грн до 544.99 грн
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ISO5852SDW | Texas Instruments |
Galvanically Isolated Gate Drivers 5.7kVrms, 2.5A/5A single-channel isolated gate driver w/ split output, STO & protection features 16-SOIC -40 to 125 |
на замовлення 62 шт: термін постачання 21-30 дні (днів) |
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ISO5852SDW | TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16-W; -5÷2.5A Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: SO16-W Output current: -5...2.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 35ns Pulse fall time: 37ns Input voltage: 2.25...5.5V Supply voltage: 15...30V DC Insulation voltage: 5.7kV Integrated circuit features: galvanically isolated Topology: IGBT half-bridge; MOSFET half-bridge Kind of package: tube Protection: undervoltage UVP |
на замовлення 174 шт: термін постачання 14-30 дні (днів) |
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| ISO5852SDW |
|
Виробник: Texas Instruments
Galvanically Isolated Gate Drivers 5.7kVrms, 2.5A/5A single-channel isolated gate driver w/ split output, STO & protection features 16-SOIC -40 to 125
Galvanically Isolated Gate Drivers 5.7kVrms, 2.5A/5A single-channel isolated gate driver w/ split output, STO & protection features 16-SOIC -40 to 125
на замовлення 62 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 515.45 грн |
| 10+ | 458.87 грн |
| 25+ | 380.38 грн |
| 120+ | 330.67 грн |
| 280+ | 316.18 грн |
| 520+ | 287.87 грн |
| 1000+ | 251.28 грн |
| ISO5852SDW |
|
Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16-W; -5÷2.5A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -5...2.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 35ns
Pulse fall time: 37ns
Input voltage: 2.25...5.5V
Supply voltage: 15...30V DC
Insulation voltage: 5.7kV
Integrated circuit features: galvanically isolated
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: tube
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16-W; -5÷2.5A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -5...2.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 35ns
Pulse fall time: 37ns
Input voltage: 2.25...5.5V
Supply voltage: 15...30V DC
Insulation voltage: 5.7kV
Integrated circuit features: galvanically isolated
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: tube
Protection: undervoltage UVP
на замовлення 174 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 544.99 грн |
| 3+ | 478.64 грн |
| 10+ | 423.79 грн |
| 40+ | 346.51 грн |