| Кількість | Ціна |
|---|---|
| 6+ | 62.25 грн |
| 10+ | 39.47 грн |
| 100+ | 28.19 грн |
| 500+ | 26.99 грн |
| 1000+ | 25.94 грн |
| 2000+ | 24.74 грн |
| 5000+ | 24.32 грн |
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Технічний опис ISP16DP10LMXTSA1 Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 3.9A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 2.2A, 10V, Power Dissipation (Max): 1.8W (Ta), 5W (Tc), Vgs(th) (Max) @ Id: 2V @ 1.037mA, Supplier Device Package: PG-SOT223-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V.
Інші пропозиції ISP16DP10LMXTSA1 за ціною від 48.26 грн до 69.78 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|
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ISP16DP10LMXTSA1 | Infineon Technologies |
 Description: SMALL SIGNAL MOSFETS PG-SOT223-4Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 3.9A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 2.2A, 10V Power Dissipation (Max): 1.8W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2V @ 1.037mA Supplier Device Package: PG-SOT223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
|
| ISP16DP10LMXTSA1 |
|
Виробник: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.2A, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.037mA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.2A, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.037mA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 69.78 грн |
| 10+ | 48.26 грн |