ISP670P06NMAXTSA1 Infineon Technologies
| Кількість | Ціна |
|---|---|
| 3+ | 154.59 грн |
| 10+ | 97.27 грн |
| 100+ | 57.30 грн |
| 500+ | 45.60 грн |
| 1000+ | 39.61 грн |
| 2000+ | 38.69 грн |
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Технічний опис ISP670P06NMAXTSA1 Infineon Technologies
Description: ISP670P06NMAXTSA1, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 6.4A (Tc), Rds On (Max) @ Id, Vgs: 67mOhm @ 3.7A, 10V, Power Dissipation (Max): 1.8W (Ta), 5W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.037mA, Supplier Device Package: PG-SOT223-4-21, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції ISP670P06NMAXTSA1 за ціною від 58.28 грн до 186.34 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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ISP670P06NMAXTSA1 | Infineon Technologies |
 Description: ISP670P06NMAXTSA1Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 6.4A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 3.7A, 10V Power Dissipation (Max): 1.8W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.037mA Supplier Device Package: PG-SOT223-4-21 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 550 шт: термін постачання 21-31 дні (днів) |
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| ISP670P06NMAXTSA1 |
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Виробник: Infineon Technologies
Description: ISP670P06NMAXTSA1
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 6.4A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3.7A, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Qualification: AEC-Q101
Description: ISP670P06NMAXTSA1
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 6.4A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3.7A, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Qualification: AEC-Q101
на замовлення 550 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 186.34 грн |
| 10+ | 114.76 грн |
| 100+ | 77.88 грн |
| 500+ | 58.28 грн |