ISS17EP06LMXTSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 30 V
| Кількість | Ціна |
|---|---|
| 3000+ | 4.92 грн |
| 6000+ | 4.28 грн |
| 9000+ | 4.27 грн |
| 15000+ | 3.74 грн |
| 21000+ | 3.63 грн |
| 30000+ | 3.41 грн |
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Технічний опис ISS17EP06LMXTSA1 Infineon Technologies
Description: MOSFET P-CH 60V 300MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V, Power Dissipation (Max): 360mW (Ta), Vgs(th) (Max) @ Id: 2V @ 34µA, Supplier Device Package: PG-SOT23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.79 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 30 V.
Інші пропозиції ISS17EP06LMXTSA1 за ціною від 3.88 грн до 25.82 грн
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ISS17EP06LMXTSA1 | Infineon Technologies |
Description: MOSFET P-CH 60V 300MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 34µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 30 V |
на замовлення 47400 шт: термін постачання 21-31 дні (днів) |
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ISS17EP06LMXTSA1 | Infineon Technologies |
MOSFETs SMALL SIGNAL MOSFETS |
на замовлення 16008 шт: термін постачання 21-30 дні (днів) |
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| ISS17EP06LMXTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 30 V
Description: MOSFET P-CH 60V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 30 V
на замовлення 47400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 24.58 грн |
| 21+ | 14.66 грн |
| 100+ | 7.11 грн |
| 500+ | 6.31 грн |
| 1000+ | 5.63 грн |
| ISS17EP06LMXTSA1 |
|
Виробник: Infineon Technologies
MOSFETs SMALL SIGNAL MOSFETS
MOSFETs SMALL SIGNAL MOSFETS
на замовлення 16008 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 25.82 грн |
| 21+ | 15.48 грн |
| 100+ | 7.40 грн |
| 500+ | 6.20 грн |
| 1000+ | 5.07 грн |
| 3000+ | 4.37 грн |
| 6000+ | 3.88 грн |