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| 100+ | 52.58 грн |
| 500+ | 43.42 грн |
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Технічний опис ISZ0501NLSATMA1 Infineon Technologies
Description: 25V, N-CH MOSFET, LOGIC LEVEL, P, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TDSON-8-25, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 12 V.
Інші пропозиції ISZ0501NLSATMA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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ISZ0501NLSATMA1 | Infineon Technologies |
 Description: 25V, N-CH MOSFET, LOGIC LEVEL, PPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-25 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 12 V |
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ISZ0501NLSATMA1 | Infineon Technologies |
Description: 25V, N-CH MOSFET, LOGIC LEVEL, P Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-25 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| ISZ0501NLSATMA1 |
|
Виробник: Infineon Technologies
Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-25
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 12 V
Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-25
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 12 V
товару немає в наявності
В кошику
од. на суму грн.
| ISZ0501NLSATMA1 |
|
Виробник: Infineon Technologies
Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-25
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-25
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.