ISZ053N08NM6ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-TSDSON-8-34
Vgs(th) (Max) @ Id: 3.5V @ 36µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
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Технічний опис ISZ053N08NM6ATMA1 Infineon Technologies
Description: TRENCH 40.
Інші пропозиції ISZ053N08NM6ATMA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
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ISZ053N08NM6ATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100V Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Supplier Device Package: PG-TSDSON-8-34 Vgs(th) (Max) @ Id: 3.5V @ 36µA Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN |
товару немає в наявності |
В кошику од. на суму грн. |
| ISZ053N08NM6ATMA1 |
|
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-TSDSON-8-34
Vgs(th) (Max) @ Id: 3.5V @ 36µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-TSDSON-8-34
Vgs(th) (Max) @ Id: 3.5V @ 36µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
товару немає в наявності
В кошику
од. на суму грн.