| Кількість | Ціна |
|---|---|
| 4+ | 90.45 грн |
| 10+ | 70.19 грн |
| 100+ | 52.23 грн |
| 500+ | 48.35 грн |
| 1000+ | 36.86 грн |
| 2500+ | 35.88 грн |
| 5000+ | 32.63 грн |
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Технічний опис ISZ0803NLSATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 7.7A/37A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc), Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 43W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 18µA, Supplier Device Package: PG-TSDSON-8-26, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V.
Інші пропозиції ISZ0803NLSATMA1 за ціною від 29.88 грн до 117.35 грн
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ISZ0803NLSATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 100V 7.7A/37A TSDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc) Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 18µA Supplier Device Package: PG-TSDSON-8-26 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V |
на замовлення 4800 шт: термін постачання 21-31 дні (днів) |
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| ISZ0803NLSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 7.7A/37A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 18µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Description: MOSFET N-CH 100V 7.7A/37A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 18µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 117.35 грн |
| 10+ | 71.55 грн |
| 100+ | 47.93 грн |
| 500+ | 35.50 грн |
| 1000+ | 32.44 грн |
| 2000+ | 29.88 грн |