ISZ143N13NM6ATMA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 54A (Tc), Rds On (Max) @ Id, Vgs: 13.6mOhm @ 20A, 15V, Power Dissipation (Max): 2.5W (Ta), 95W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 35µA, Supplier Device Package: PG-TSDSON-8-36, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 135 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 68 V.