ISZ520N20NM6ATMA1 Infineon Technologies

Description: TRENCH >=100V, Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Supplier Device Package: PG-TSDSON-8-34, Vgs(th) (Max) @ Id: 4.5V @ 31µA, Power Dissipation (Max): 2.5W (Ta), 88W (Tc), Rds On (Max) @ Id, Vgs: 47.8mOhm @ 15A, 15V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 26A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).