ITD50N04S4L07ATMA1 Infineon Technologies


Infineon-ITD50N04S4L-07-DS-v01_00-EN.pdf?fileId=5546d4626102d35a01612276ce972aeb Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 18µA
Supplier Device Package: PG-TO252-5-311
Grade: Automotive
Qualification: AEC-Q100
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Технічний опис ITD50N04S4L07ATMA1 Infineon Technologies

Description: MOSFET_(20V 40V), Packaging: Tape & Reel (TR), Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Common Drain, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 46W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V, Rds On (Max) @ Id, Vgs: 7.2mOhm @ 50A, 10V, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 18µA, Supplier Device Package: PG-TO252-5-311, Grade: Automotive, Qualification: AEC-Q100.

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ITD50N04S4L07ATMA1 ITD50N04S4L07ATMA1 Виробник : Infineon Technologies Infineon-ITD50N04S4L-07-DS-v01_00-EN-1732051.pdf MOSFET N-CHANNEL 30/40V
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