Технічний опис ITD50N04S4L07ATMA1 Infineon Technologies
Description: MOSFET 2N-CH 40V 50A TO252-5, Packaging: Tape & Reel (TR), Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Common Drain, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 46W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V, Rds On (Max) @ Id, Vgs: 7.2mOhm @ 50A, 10V, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 18µA, Supplier Device Package: PG-TO252-5-311, Grade: Automotive, Qualification: AEC-Q100.
Інші пропозиції ITD50N04S4L07ATMA1
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ITD50N04S4L07ATMA1 | Виробник : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: 2 N-Channel, Common Drain Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 46W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V Rds On (Max) @ Id, Vgs: 7.2mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 18µA Supplier Device Package: PG-TO252-5-311 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
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ITD50N04S4L07ATMA1 | Виробник : Infineon Technologies |
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товару немає в наявності |