ITF48IF1200HR IXYS
Виробник: IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; Trench; 1.2kV; 48A; 390W; ISO247™
Mounting: THT
Kind of package: tube
Case: ISO247™
Power dissipation: 390W
Technology: Trench; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 160A
Turn-on time: 52ns
Turn-off time: 460ns
Type of transistor: IGBT
Gate charge: 175nC
кількість в упаковці: 1 шт
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Технічний опис ITF48IF1200HR IXYS
Description: DISC IGBT XPT-GENX3 ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A, Supplier Device Package: ISO247, IGBT Type: Trench, Td (on/off) @ 25°C: 26ns/350ns, Switching Energy: 3mJ (on), 2.4mJ (off), Test Condition: 600V, 40A, 12Ohm, 15V, Gate Charge: 175 nC, Part Status: Active, Current - Collector (Ic) (Max): 72 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 390 W.
Інші пропозиції ITF48IF1200HR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| ITF48IF1200HR | Виробник : IXYS |
Description: DISC IGBT XPT-GENX3 ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: ISO247 IGBT Type: Trench Td (on/off) @ 25°C: 26ns/350ns Switching Energy: 3mJ (on), 2.4mJ (off) Test Condition: 600V, 40A, 12Ohm, 15V Gate Charge: 175 nC Part Status: Active Current - Collector (Ic) (Max): 72 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 390 W |
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ITF48IF1200HR | Виробник : IXYS |
IGBT Transistors IGBT XPT-GENX3 |
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ITF48IF1200HR | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; Trench; 1.2kV; 48A; 390W; ISO247™ Mounting: THT Kind of package: tube Case: ISO247™ Power dissipation: 390W Technology: Trench; XPT™ Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 48A Pulsed collector current: 160A Turn-on time: 52ns Turn-off time: 460ns Type of transistor: IGBT Gate charge: 175nC |
товар відсутній |