IV1D06006P3 Inventchip
Виробник: Inventchip
Description: DIODE SIL CARB 650V 16.7A TO2523
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-3
Current - Average Rectified (Io): 16.7A
Capacitance @ Vr, F: 224pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 119.60 грн |
| 10+ | 72.92 грн |
| 100+ | 48.96 грн |
| 500+ | 36.31 грн |
| 1000+ | 33.21 грн |
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Технічний опис IV1D06006P3 Inventchip
Description: DIODE SIL CARB 650V 16.7A TO2523, Current - Reverse Leakage @ Vr: 10 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-252-3, Current - Average Rectified (Io): 16.7A, Capacitance @ Vr, F: 224pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції IV1D06006P3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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IV1D06006P3 | Inventchip |
Description: DIODE SIL CARB 650V 16.7A TO2523 Current - Reverse Leakage @ Vr: 10 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-252-3 Current - Average Rectified (Io): 16.7A Capacitance @ Vr, F: 224pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| IV1D06006P3 |
|
Виробник: Inventchip
Description: DIODE SIL CARB 650V 16.7A TO2523
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-3
Current - Average Rectified (Io): 16.7A
Capacitance @ Vr, F: 224pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE SIL CARB 650V 16.7A TO2523
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-3
Current - Average Rectified (Io): 16.7A
Capacitance @ Vr, F: 224pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.