IVCR1412SR Inventchip
Виробник: InventchipDescription: NEXTDRIVE COMPACT SIC MOSFET DR
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: SOT-23-6
Rise / Fall Time (Typ): 12ns, 6ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET, Si, GaN
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
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Технічний опис IVCR1412SR Inventchip
Description: NEXTDRIVE COMPACT SIC MOSFET DR, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 4.5V ~ 25V, Input Type: Non-Inverting, Supplier Device Package: SOT-23-6, Rise / Fall Time (Typ): 12ns, 6ns, Channel Type: Single, Driven Configuration: Low-Side, Number of Drivers: 1, Gate Type: IGBT, SiC MOSFET, Si, GaN, Current - Peak Output (Source, Sink): 4A, 4A, DigiKey Programmable: Not Verified.
Інші пропозиції IVCR1412SR
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IVCR1412SR | Виробник : Inventchip |
Description: NEXTDRIVE COMPACT SIC MOSFET DR Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 25V Input Type: Non-Inverting Supplier Device Package: SOT-23-6 Rise / Fall Time (Typ): 12ns, 6ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: IGBT, SiC MOSFET, Si, GaN Current - Peak Output (Source, Sink): 4A, 4A DigiKey Programmable: Not Verified |
товару немає в наявності |