IX4352NE Littelfuse Inc.
Виробник: Littelfuse Inc.
Description: 9A Low Side SiC MOSFET & IGBT Dr
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: -3.5V ~ -10V, 13V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC-EP
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1V, 2.2V
Current - Peak Output (Source, Sink): 9A, 9A
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 220.56 грн |
| 10+ | 190.86 грн |
| 25+ | 180.42 грн |
| 100+ | 146.76 грн |
| 250+ | 139.23 грн |
| 500+ | 124.93 грн |
| 1000+ | 103.64 грн |
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Технічний опис IX4352NE Littelfuse Inc.
Description: 9A Low Side SiC MOSFET & IGBT Dr, Packaging: Tube, Package / Case: 16-SOIC (0.154", 3.90mm Width) Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: -3.5V ~ -10V, 13V ~ 25V, Input Type: Non-Inverting, Supplier Device Package: 16-SOIC-EP, Rise / Fall Time (Typ): 10ns, 10ns, Channel Type: Single, Driven Configuration: Low-Side, Number of Drivers: 1, Gate Type: IGBT, SiC MOSFET, Logic Voltage - VIL, VIH: 1V, 2.2V, Current - Peak Output (Source, Sink): 9A, 9A.
