IXA4I1200UC-TRL IXYS
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 1.2kV; 9A; 45W; TO252
Mounting: SMD
Gate charge: 12nC
Collector-emitter voltage: 1.2kV
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Case: TO252
Technology: XPT™
Turn-on time: 70ns
Turn-off time: 250ns
Power dissipation: 45W
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 1.2kV; 9A; 45W; TO252
Mounting: SMD
Gate charge: 12nC
Collector-emitter voltage: 1.2kV
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Case: TO252
Technology: XPT™
Turn-on time: 70ns
Turn-off time: 250ns
Power dissipation: 45W
Type of transistor: IGBT
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Технічний опис IXA4I1200UC-TRL IXYS
Description: IGBT 1200V 9A 45W TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A, Supplier Device Package: TO-252AA, IGBT Type: PT, Switching Energy: 400µJ (on), 300µJ (off), Test Condition: 600V, 3A, 330Ohm, 15V, Gate Charge: 12 nC, Current - Collector (Ic) (Max): 9 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 45 W.
Інші пропозиції IXA4I1200UC-TRL
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXA4I1200UC-TRL | Виробник : IXYS |
Description: IGBT 1200V 9A 45W TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A Supplier Device Package: TO-252AA IGBT Type: PT Switching Energy: 400µJ (on), 300µJ (off) Test Condition: 600V, 3A, 330Ohm, 15V Gate Charge: 12 nC Current - Collector (Ic) (Max): 9 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 45 W |
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IXA4I1200UC-TRL | Виробник : IXYS | IGBT Transistors IGBT XPT-GENX3 |
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IXA4I1200UC-TRL | Виробник : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; XPT™; 1.2kV; 9A; 45W; TO252 Mounting: SMD Gate charge: 12nC Collector-emitter voltage: 1.2kV Collector current: 9A Gate-emitter voltage: ±20V Pulsed collector current: 9A Case: TO252 Technology: XPT™ Turn-on time: 70ns Turn-off time: 250ns Power dissipation: 45W Type of transistor: IGBT |
товар відсутній |