IXBF20N360 IXYS
Виробник: IXYS
Description: IGBT 3600V 45A ISOPLUS I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.7 µs
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Td (on/off) @ 25°C: 18ns/238ns
Switching Energy: 15.5mJ (on), 4.3mJ (off)
Test Condition: 1500V, 20A, 10Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 3600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 230 W
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Технічний опис IXBF20N360 IXYS
Description: IGBT 3600V 45A ISOPLUS I4-PAC, Packaging: Tube, Package / Case: i4-Pac™-5 (3 Leads), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 1.7 µs, Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A, Supplier Device Package: ISOPLUS i4-PAC™, Td (on/off) @ 25°C: 18ns/238ns, Switching Energy: 15.5mJ (on), 4.3mJ (off), Test Condition: 1500V, 20A, 10Ohm, 15V, Gate Charge: 43 nC, Part Status: Active, Current - Collector (Ic) (Max): 45 A, Voltage - Collector Emitter Breakdown (Max): 3600 V, Current - Collector Pulsed (Icm): 220 A, Power - Max: 230 W.
Інші пропозиції IXBF20N360 за ціною від 4385.50 грн до 5006.72 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||
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IXBF20N360 | Виробник : IXYS |
IGBTs 3600V/45A Reverse Conducting IGBT |
на замовлення 301 шт: термін постачання 21-30 дні (днів) |
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IXBF20N360 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 20A; 230W Mounting: THT Gate charge: 110nC Power dissipation: 230W Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 220A Collector-emitter voltage: 3.6kV Technology: BiMOSFET™ Features of semiconductor devices: high voltage Type of transistor: IGBT Case: ISOPLUS i4-pac™ x024c Kind of package: tube |
товару немає в наявності |