Технічний опис IXDH30N120D1 Littelfuse
Description: IGBT 1200V 60A 300W TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 40 ns, Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 30A, Supplier Device Package: TO-247AD, IGBT Type: NPT, Switching Energy: 4.6mJ (on), 3.4mJ (off), Test Condition: 600V, 30A, 47Ohm, 15V, Gate Charge: 120 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 76 A, Power - Max: 300 W.
Інші пропозиції IXDH30N120D1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
IXDH30N120D1 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 38A; 300W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.2kV Collector current: 38A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 76A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 170ns Turn-off time: 570ns кількість в упаковці: 1 шт |
товар відсутній |
||
IXDH30N120D1 | Виробник : IXYS |
Description: IGBT 1200V 60A 300W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 30A Supplier Device Package: TO-247AD IGBT Type: NPT Switching Energy: 4.6mJ (on), 3.4mJ (off) Test Condition: 600V, 30A, 47Ohm, 15V Gate Charge: 120 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 76 A Power - Max: 300 W |
товар відсутній |
||
IXDH30N120D1 | Виробник : IXYS | IGBT Transistors 30 Amps 1200V |
товар відсутній |
||
IXDH30N120D1 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 38A; 300W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.2kV Collector current: 38A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 76A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 170ns Turn-off time: 570ns |
товар відсутній |