IXDI602SIATR IXYS Integrated Circuits Division
Виробник: IXYS Integrated Circuits Division
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 7.5ns, 6.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
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Технічний опис IXDI602SIATR IXYS Integrated Circuits Division
Description: IC GATE DRVR LOW-SIDE 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Voltage - Supply: 4.5V ~ 35V, Input Type: Inverting, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 7.5ns, 6.5ns, Channel Type: Independent, Driven Configuration: Low-Side, Number of Drivers: 2, Gate Type: IGBT, MOSFET (N-Channel, P-Channel), Logic Voltage - VIL, VIH: 0.8V, 3V, Current - Peak Output (Source, Sink): 2A, 2A, DigiKey Programmable: Not Verified.
Інші пропозиції IXDI602SIATR за ціною від 41.53 грн до 96.65 грн
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IXDI602SIATR | IXYS Integrated Circuits Division |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 35V Input Type: Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 7.5ns, 6.5ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel, P-Channel) Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 2A, 2A DigiKey Programmable: Not Verified |
на замовлення 2048 шт: термін постачання 21-31 дні (днів) |
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IXDI602SIATR | IXYS Integrated Circuits |
Gate Drivers 2-A Dual Low-Side Ultrafast MOSFET |
на замовлення 3964 шт: термін постачання 21-30 дні (днів) |
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| IXDI602SIATR |
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Виробник: IXYS Integrated Circuits Division
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 7.5ns, 6.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 7.5ns, 6.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
на замовлення 2048 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 91.64 грн |
| 10+ | 64.17 грн |
| 25+ | 58.21 грн |
| 100+ | 48.41 грн |
| 250+ | 45.47 грн |
| 500+ | 43.69 грн |
| 1000+ | 41.53 грн |
| IXDI602SIATR |
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Виробник: IXYS Integrated Circuits
Gate Drivers 2-A Dual Low-Side Ultrafast MOSFET
Gate Drivers 2-A Dual Low-Side Ultrafast MOSFET
на замовлення 3964 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 96.65 грн |
| 10+ | 69.62 грн |
| 25+ | 54.47 грн |
| 100+ | 48.25 грн |
| 250+ | 45.29 грн |
| 500+ | 44.32 грн |