Технічний опис IXDR35N60BD1 IXYS
Description: IGBT 600V 38A 125W ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 40 ns, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 35A, Supplier Device Package: ISOPLUS247™, IGBT Type: NPT, Switching Energy: 1.6mJ (on), 800µJ (off), Test Condition: 300V, 35A, 10Ohm, 15V, Gate Charge: 140 nC, Part Status: Active, Current - Collector (Ic) (Max): 38 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 48 A, Power - Max: 125 W.
Інші пропозиції IXDR35N60BD1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXDR35N60BD1 | Виробник : Littelfuse |
 Trans IGBT Chip N-CH 600V 38A 125000mW 3-Pin(3+Tab) ISOPLUS 247 |
товар відсутній |
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IXDR35N60BD1 | Виробник : IXYS |
Description: IGBT 600V 38A 125W ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 35A Supplier Device Package: ISOPLUS247™ IGBT Type: NPT Switching Energy: 1.6mJ (on), 800µJ (off) Test Condition: 300V, 35A, 10Ohm, 15V Gate Charge: 140 nC Part Status: Active Current - Collector (Ic) (Max): 38 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 48 A Power - Max: 125 W |
товар відсутній |