Технічний опис IXEN60N120D1 IXYS
Description: IGBT MODULE 1200V 100A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A, NTC Thermistor: No, Supplier Device Package: SOT-227B, IGBT Type: NPT, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 445 W, Current - Collector Cutoff (Max): 800 µA, Input Capacitance (Cies) @ Vce: 3.8 nF @ 25 V.
Інші пропозиції IXEN60N120D1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IXEN60N120D1 |
NPT2 IGBT (Ic25=110 A, Vces=1200 V, Vce(sat) typ.=2.1 V ) SOT-227B Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | ||
|
IXEN60N120D1 | IXYS |
Description: IGBT MODULE 1200V 100A SOT-227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 445 W Current - Collector Cutoff (Max): 800 µA Input Capacitance (Cies) @ Vce: 3.8 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
| IXEN60N120D1 | IXYS |
IGBT Transistors 60 Amps 1200V |
товару немає в наявності |
В кошику од. на суму грн. |
| IXEN60N120D1 |
![]() |
NPT2 IGBT (Ic25=110 A, Vces=1200 V, Vce(sat) typ.=2.1 V ) SOT-227B Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| IXEN60N120D1 |
![]() |
Виробник: IXYS
Description: IGBT MODULE 1200V 100A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 445 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 3.8 nF @ 25 V
Description: IGBT MODULE 1200V 100A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 445 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 3.8 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IXEN60N120D1 |
![]() |
Виробник: IXYS
IGBT Transistors 60 Amps 1200V
IGBT Transistors 60 Amps 1200V
товару немає в наявності
В кошику
од. на суму грн.



