IXFA22N65X2 IXYS

Description: MOSFET N-CH 650V 22A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 1.5mA, Supplier Device Package: TO-263HV, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V.