Продукція > LITTELFUSE > IXFA270N06T3

IXFA270N06T3 Littelfuse

Name: IXFA270N06T3
Brand: IXYS
SKU: 453792491-1
Price: 248.89 UAH
Availability: BackOrder

mosfets_n-channel_trench_gate_ixf_270n06t3_datasheet.pdf.pdf

Виробник: Littelfuse
Power MOSFET

товар відсутній

Відгуки про товар

Написати відгук

Технічний опис IXFA270N06T3 Littelfuse

Description: MOSFET N-CH 60V 270A TO263AA, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 270A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V.

Інші пропозиції IXFA270N06T3

Назва	Виробник	Інформація	Доступність
IXFA270N06T3	Виробник : IXYS	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns Type of transistor: N-MOSFET Technology: HiPerFET™; TrenchT3™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 480W Case: TO263 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: SMD Gate charge: 200nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 47ns кількість в упаковці: 1 шт	товар відсутній
IXFA270N06T3	Виробник : IXYS	Description: MOSFET N-CH 60V 270A TO263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V	товар відсутній
IXFA270N06T3	Виробник : IXYS	MOSFET 60V/270A TrenchT3	товар відсутній
IXFA270N06T3	Виробник : IXYS	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns Type of transistor: N-MOSFET Technology: HiPerFET™; TrenchT3™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 480W Case: TO263 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: SMD Gate charge: 200nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 47ns	товар відсутній