Технічний опис IXFA34N65X2 Littelfuse
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 34A, Power dissipation: 540W, Case: TO263, On-state resistance: 0.1Ω, Mounting: SMD, Gate charge: 56nC, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: ultra junction x-class, Reverse recovery time: 164ns, кількість в упаковці: 1 шт.
Інші пропозиції IXFA34N65X2
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFA34N65X2 | Виробник : Littelfuse | Trans MOSFET N-CH 650V 34A 3-Pin(2+Tab) D2PAK |
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IXFA34N65X2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO263 On-state resistance: 0.1Ω Mounting: SMD Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 164ns кількість в упаковці: 1 шт |
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IXFA34N65X2 | Виробник : IXYS | MOSFET 650V/34A Ultra Junction X2-Class |
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IXFA34N65X2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO263 On-state resistance: 0.1Ω Mounting: SMD Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 164ns |
товар відсутній |