IXFA36N60X3 Littelfuse Inc.
Виробник: Littelfuse Inc.
Description: MOSFET ULTRA JCT 600V 36A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Description: MOSFET ULTRA JCT 600V 36A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 501.49 грн |
| 50+ | 303.56 грн |
| 100+ | 279.04 грн |
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Технічний опис IXFA36N60X3 Littelfuse Inc.
Description: MOSFET ULTRA JCT 600V 36A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: TO-263AA (IXFA), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V.
Інші пропозиції IXFA36N60X3 за ціною від 245.57 грн до 543.47 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||
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IXFA36N60X3 | Виробник : IXYS |
 MOSFETs TO263 600V 36A N-CH X3CLASS |
на замовлення 1498 шт: термін постачання 21-30 дні (днів) |
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| IXFA36N60X3 | Виробник : Littelfuse |
N-Channel Enhancement Mode Power MOSFET |
товару немає в наявності |
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| IXFA36N60X3 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W Mounting: SMD Reverse recovery time: 180ns Drain-source voltage: 600V Drain current: 36A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 446W Polarisation: unipolar Kind of package: tube Gate charge: 29nC Technology: HiPerFET™; X3-Class Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 48A Case: TO263 кількість в упаковці: 1 шт |
товару немає в наявності |
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| IXFA36N60X3 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W Mounting: SMD Reverse recovery time: 180ns Drain-source voltage: 600V Drain current: 36A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 446W Polarisation: unipolar Kind of package: tube Gate charge: 29nC Technology: HiPerFET™; X3-Class Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 48A Case: TO263 |
товару немає в наявності |