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IXFA4N100Q-TRL

IXFA4N100Q-TRL Littelfuse


ete_mosfets_n-channel_hiperfets_ixfp4n100q_datasheet.pdf.pdf Виробник: Littelfuse
Trans MOSFET N-CH 1KV 4A 3-Pin(2+Tab) D2PAK
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Технічний опис IXFA4N100Q-TRL Littelfuse

Description: MOSFET N-CH 1000V 4A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.5mA, Supplier Device Package: TO-263AA (IXFA), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V.

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IXFA4N100Q-TRL IXFA4N100Q-TRL Виробник : IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfp4n100q_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 4A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
товар відсутній
IXFA4N100Q-TRL IXFA4N100Q-TRL Виробник : IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfp4n100q_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 4A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
товар відсутній
IXFA4N100Q-TRL IXFA4N100Q-TRL Виробник : IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfp4n100q_datasheet.pdf.pdf MOSFET
товар відсутній