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IXFB100N50P IXYS


Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXFB100N50P_Datasheet.PDF
Виробник: IXYS
MOSFETs 100 Amps 500V 0.05 Ohms Rds
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Технічний опис IXFB100N50P IXYS

Description: MOSFET N-CH 500V 100A PLUS264, Package / Case: TO-264-3, TO-264AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PLUS264™, Vgs(th) (Max) @ Id: 5V @ 8mA, Power Dissipation (Max): 1890W (Tc), Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Through Hole.

Інші пропозиції IXFB100N50P

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
IXFB100N50P IXFB100N50P Littelfuse Inc. Description: MOSFET N-CH 500V 100A PLUS264
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PLUS264™
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 1890W (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
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IXFB100N50P IXFB100N50P IXYS IXFB100N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Case: PLUS264™
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 240nC
On-state resistance: 49mΩ
Gate-source voltage: ±30V
Drain current: 100A
Drain-source voltage: 500V
Power dissipation: 1890W
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IXFB100N50P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 500V 100A PLUS264
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PLUS264™
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 1890W (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
товару немає в наявності
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IXFB100N50P IXFB100N50P.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Case: PLUS264™
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 240nC
On-state resistance: 49mΩ
Gate-source voltage: ±30V
Drain current: 100A
Drain-source voltage: 500V
Power dissipation: 1890W
товару немає в наявності
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