IXFB100N50Q3 IXYS
Виробник: IXYSDescription: MOSFET N-CH 500V 100A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V
Power Dissipation (Max): 1560W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 25 V
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2857.66 грн |
| 10+ | 2567.67 грн |
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Технічний опис IXFB100N50Q3 IXYS
Description: MOSFET N-CH 500V 100A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V, Power Dissipation (Max): 1560W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 8mA, Supplier Device Package: PLUS264™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 25 V.
Інші пропозиції IXFB100N50Q3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IXFB100N50Q3 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™ Drain-source voltage: 500V Drain current: 100A Case: PLUS264™ Mounting: THT Polarisation: unipolar On-state resistance: 49mΩ Power dissipation: 1.56kW Kind of channel: enhanced Gate charge: 255nC Kind of package: tube Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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IXFB100N50Q3 | Виробник : IXYS |
MOSFET Q3Class HiPerFET Pwr MOSFET 500V/100A |
товар відсутній |
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IXFB100N50Q3 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™ Drain-source voltage: 500V Drain current: 100A Case: PLUS264™ Mounting: THT Polarisation: unipolar On-state resistance: 49mΩ Power dissipation: 1.56kW Kind of channel: enhanced Gate charge: 255nC Kind of package: tube Type of transistor: N-MOSFET |
товар відсутній |