IXFB210N20P IXYS
Виробник: IXYSDescription: MOSFET N-CH 200V 210A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 105A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2289.3 грн |
| 25+ | 1827.84 грн |
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Технічний опис IXFB210N20P IXYS
Description: MOSFET N-CH 200V 210A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 210A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 105A, 10V, Power Dissipation (Max): 1500W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 8mA, Supplier Device Package: PLUS264™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V.
Інші пропозиції IXFB210N20P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IXFB210N20P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 210A Power dissipation: 1.5kW Case: PLUS264™ On-state resistance: 10.5mΩ Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IXFB210N20P | Виробник : IXYS |
MOSFET 210 Amps 200V 0.0105 Rds |
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IXFB210N20P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 210A Power dissipation: 1.5kW Case: PLUS264™ On-state resistance: 10.5mΩ Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |