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Технічний опис IXFB30N120P IXYS
Description: MOSFET N-CH 1200V 30A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: PLUS264™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 22500 pF @ 25 V.
Інші пропозиції IXFB30N120P
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| IXFB30N120P |
 MOSFET N-CH 1200V 30A PLUS264 Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | ||
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IXFB30N120P | IXYS |
Description: MOSFET N-CH 1200V 30A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22500 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXFB30N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™ Type of transistor: N-MOSFET Drain-source voltage: 1.2kV Drain current: 30A On-state resistance: 0.35Ω Power dissipation: 1.25kW Gate charge: 310nC Polarisation: unipolar Technology: HiPerFET™; Polar™ Kind of channel: enhancement Gate-source voltage: ±30V Kind of package: tube Case: PLUS264™ Reverse recovery time: 300ns Mounting: THT |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. |
 |
IXFB30N120P | IXYS SEMICONDUCTOR |
Description: IXYS SEMICONDUCTOR - IXFB30N120P - Leistungs-MOSFET, n-Kanal, 1.2 kV, 30 A, 0.35 ohm, PLUS264, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 1.2 Dauer-Drainstrom Id: 30 Qualifikation: - Verlustleistung Pd: 1.25 Gate-Source-Schwellenspannung, max.: 6.5 Verlustleistung: 1.25 Bauform - Transistor: PLUS264 Anzahl der Pins: 3 Produktpalette: Polar HiPerFET Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.35 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.35 SVHC: No SVHC (16-Jan-2020) |
товару немає в наявності |
В кошику од. на суму грн. |
| IXFB30N120P |
|
MOSFET N-CH 1200V 30A PLUS264 Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| IXFB30N120P |
|
Виробник: IXYS
Description: MOSFET N-CH 1200V 30A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22500 pF @ 25 V
Description: MOSFET N-CH 1200V 30A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22500 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IXFB30N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 0.35Ω
Power dissipation: 1.25kW
Gate charge: 310nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Kind of package: tube
Case: PLUS264™
Reverse recovery time: 300ns
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 0.35Ω
Power dissipation: 1.25kW
Gate charge: 310nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Kind of package: tube
Case: PLUS264™
Reverse recovery time: 300ns
Mounting: THT
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| IXFB30N120P |
|
Виробник: IXYS SEMICONDUCTOR
Description: IXYS SEMICONDUCTOR - IXFB30N120P - Leistungs-MOSFET, n-Kanal, 1.2 kV, 30 A, 0.35 ohm, PLUS264, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 1.2
Dauer-Drainstrom Id: 30
Qualifikation: -
Verlustleistung Pd: 1.25
Gate-Source-Schwellenspannung, max.: 6.5
Verlustleistung: 1.25
Bauform - Transistor: PLUS264
Anzahl der Pins: 3
Produktpalette: Polar HiPerFET
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.35
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.35
SVHC: No SVHC (16-Jan-2020)
Description: IXYS SEMICONDUCTOR - IXFB30N120P - Leistungs-MOSFET, n-Kanal, 1.2 kV, 30 A, 0.35 ohm, PLUS264, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 1.2
Dauer-Drainstrom Id: 30
Qualifikation: -
Verlustleistung Pd: 1.25
Gate-Source-Schwellenspannung, max.: 6.5
Verlustleistung: 1.25
Bauform - Transistor: PLUS264
Anzahl der Pins: 3
Produktpalette: Polar HiPerFET
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.35
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.35
SVHC: No SVHC (16-Jan-2020)
товару немає в наявності
В кошику
од. на суму грн.