IXFB40N110P IXYS

Description: MOSFET N-CH 1100V 40A PLUS264, Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V, Drain to Source Voltage (Vdss): 1100 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PLUS264™, Vgs(th) (Max) @ Id: 6.5V @ 1mA, Power Dissipation (Max): 1250W (Tc), Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube.